LOW-TEMPERATURE ANNEALING BEHAVIOR OF SE-IMPLANTED GAAS STUDIED BY HIGH-RESOLUTION RUTHERFORD BACKSCATTERING CHANNELING

被引：7
|
作者：
BHATTACHARYA, RS [1 ]
PRONKO, PP [1 ]
机构：
[1] WRIGHT STATE UNIV,DAYTON,OH 45435
来源：
JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 03期
关键词：
D O I：
10.1063/1.330681
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1804 / 1806
页数：3
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