ELECTRIC-FIELD-INDUCED NEW FEATURES IN THE PHOTOCONDUCTIVITY OF EXTRINSIC SILICON

被引：0
|
作者：
CHANDRASEKHAR, HR
CHANDRASEKHAR, M
BAJAJ, KK
SCLAR, N
机构：
[1] USAF,WRIGHT AERONAUT LABS,AVION LAB,WRIGHT PATTERSON AFB,OH 45433
[2] ROCKWELL INT CORP,CTR SCI,ANAHEIM,CA 92803
来源：
PHYSICAL REVIEW B | 1985年 / 31卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.31.2494
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：2494 / 2496
页数：3
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