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- [1] LARGE CLUSTERS OF ELECTRICALLY ACTIVE DEFECTS IN INDIUM-PHOSPHIDE SINGLE-CRYSTALSSOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (05): : 483 - 487KALINUSHKIN, VPYUREV, VAMURIN, DI
- [2] VISUALIZATION OF LARGE-SCALE CLUSTERS OF ELECTRICALLY ACTIVE DEFECTS IN INDIUM-PHOSPHIDE AND GALLIUM-ARSENIDE SINGLE-CRYSTALSSEMICONDUCTORS, 1995, 29 (03) : 234 - 235YUREV, VAKALINUSHKIN, VPASTAFEV, OV
- [3] RELAXATION OF CONDUCTIVITY IN INDIUM-PHOSPHIDE SINGLE-CRYSTALSUKRAINSKII FIZICHESKII ZHURNAL, 1989, 34 (02): : 253 - 256LITOVCHENKO, PGMAKARENKO, VGOPILAT, VYTARTACHNIK, VPTYCHINA, II
- [4] GROWTH OF DOUBLE DOPED SEMIINSULATING INDIUM-PHOSPHIDE SINGLE-CRYSTALSJOURNAL OF CRYSTAL GROWTH, 1987, 83 (02) : 184 - 189TOUDIC, YCOQUILLE, RGAUNEAU, MGRANDPIERRE, GLEMARECHAL, LLAMBERT, B
- [5] IMPURITIES IN SINGLE-CRYSTAL INDIUM-PHOSPHIDEJOURNAL OF MATERIALS SCIENCE, 1980, 15 (11) : 2785 - 2794COCKAYNE, BMACEWAN, WRBROWN, GT
- [6] NATURE OF SHALLOW ACCEPTOR CENTERS IN DOPED INDIUM-PHOSPHIDE SINGLE-CRYSTALSINORGANIC MATERIALS, 1981, 17 (12) : 1581 - 1584KOLESNIK, LILOSHINSKII, AMNASHELSKII, AYYAKOBSON, SV
- [7] NON-EQUILIBRIUM CARRIER RADIATIVE RECOMBINATION IN INDIUM-PHOSPHIDE SINGLE-CRYSTALSPHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 80 (01): : 109 - 118GEORGOBIANI, ANMIKULYONOK, AVSTOYANOVA, IGTIGINYANU, IM
- [8] PRECISION LATTICE-PARAMETER MEASUREMENTS ON DOPED INDIUM-PHOSPHIDE SINGLE-CRYSTALSJOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (04) : 701 - 712SUGII, KKOIZUMI, HKUBOTA, E
- [9] DEEP CENTERS IN UNDOPED AND IRON-DOPED INDIUM-PHOSPHIDE SINGLE-CRYSTALSSOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (04): : 370 - 373GEORGOBIANI, ANMIKULENOK, AVPANASYUK, EIRADAUTSAN, SITIGINYANU, IM
- [10] SURFACE CONCENTRATIONS OF INDIUM, PHOSPHORUS, AND OXYGEN IN INDIUM-PHOSPHIDE SINGLE-CRYSTALS AFTER EXPOSURE TO GAMBLE SOLUTIONANALYTICAL CHEMISTRY, 1992, 64 (23) : 2929 - 2933DITTMAR, TBFERNANDO, QLEAVITT, JAMCINTYRE, LC