EFFECT OF MAGNETIC-FIELD TO ETCHING CHARACTERISTICS OF INDUCTIVELY-COUPLED PLASMA

被引：6

作者：

JIWARI, N ^{[1
]}

FUKASAWA, T ^{[1
]}

NAKAMURA, A ^{[1
]}

KUBOTA, K ^{[1
]}

SHINDO, H ^{[1
]}

HORIIKE, Y ^{[1
]}

机构：

[1] FUKUYAMA UNIV,FAC ENGN,FUKUYAMA,HIROSHIMA 72902,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 7B期

关键词：

PLASMA ETCHING; HELICON WAVE PLASMA; SIO2; ETCHING; HIGH DENSITY PLASMA;

D O I：

10.1143/JJAP.33.4454

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

As a first attempt, SiO2 etching characteristic is studied in a plasma produced by partially propagating helicon wave. The plasma is produced employing a ring magnet whose field profile has a zero point. Highly selective SiO2 etching is attainable in a down stream where the electron energy is fairly low, because no propagation of helicon wave and thus no radio frequency (RF) held exist there. The propagation is found by the wave pattern measurements.

引用

页码：4454 / 4457

页数：4

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