INDIUM-TIN OXIDE THIN-FILMS PREPARED BY CHEMICAL VAPOR-DEPOSITION FROM METAL ACETATES

被引：34
|
作者：
MARUYAMA, T
TABATA, K
机构：
[1] Department of Chemical Engineering, Kyoto University, Kyoto
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 02期
关键词：
Chemical vapor deposition; Indium acetate; Indium-tin oxide; Thermal decomposition reaction; Thin film; Tin diacetate; Transparent conductive film;
D O I：
10.1143/JJAP.29.L355
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Transparent conductive indium-tin oxide thin films were prepared by a low-temperature atmospheric-pressure chemical vapor deposition method without using an oxygen donor. The raw materials were indium acetate and tin diacetate, which are inexpensive and easy to handle. A 260-nm-thick polycrystalline film was obtained after 1 hour of deposition at a reaction temperature of 300°C. The resistivity was 6.93×1013Ω·cm, and the transmittance was more than 90% in most of the visible range (450–700 nm). © 1990 IOP Publishing Ltd.
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收藏
页码：L355 / L357
页数：3
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