INFLUENCE OF IMPLANTED DOSE ON RECRYSTALLIZATION OF SI AMORPHOUS LAYER

被引：6
|
作者：
BAERI, P [1 ]
CAMPISANO, SU [1 ]
CIAVOLA, G [1 ]
FOTI, G [1 ]
RIMINI, E [1 ]
机构：
[1] UNIV CATANIA,IST STRUTTURA MAT,57 CORSO ITALIA,95129-CATANIA,ITALY
来源：
APPLIED PHYSICS LETTERS | 1975年 / 26卷 / 04期
关键词：
D O I：
10.1063/1.88123
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：154 / 155
页数：2
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