1,000,000-DEGREES-C/S THIN-FILM ELECTRICAL HEATER - IN-SITU RESISTIVITY MEASUREMENTS OF AL AND TI/SI THIN-FILMS DURING ULTRA-RAPID THERMAL ANNEALING

被引：73

作者：

ALLEN, LH

RAMANATH, G

LAI, SL

MA, Z

LEE, S

ALLMAN, DDJ

FUCHS, KP

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] NCR CORP,DIV MICROELECTR PROD,COLORADO SPRINGS,CO 80916

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 04期

关键词：

D O I：

10.1063/1.111116

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We introduce a new technique for rapidly heating (10(6) degrees C/s) thin films using an electrical thermal annealing (ETA) pulse technique. By applying a high-current de electrical pulse to a conductive substrate-heater material (Si), joule heating occurs thus heating the thin film. This method was demonstrated by heating thin films of aluminum at rates ranging from 10(3) to 10(6) degrees C/s. The temperature of the system is measured by using the substrate heater as a thermistor and is found to be within approximate to+/-10 degrees C during anneals at approximate to 10(5) degrees C/s. Phase transformations in the Ti-Si system were also observed using in situ resistivity measurements during ETA at approximate to 10(4) degrees C.

引用

页码：417 / 419

页数：3