Surface-Kinetics-Controlled Ostwald Ripening of Plane Precipitates at Grain Boundaries

被引：0

作者：

Koropov, A. V. ^{[1
]}

机构：

[1] Natl Acad Sci Ukraine, Inst Appl Phys, 58,Petropavlivska Str, UA-40000 Sumy, Ukraine

来源：

JOURNAL OF NANO- AND ELECTRONIC PHYSICS | 2014年 / 6卷 / 01期

关键词：

Ostwald Ripening; Coarsening; Nuclei; Precipitates; Impurity Atoms; Diffusion; Surface Kinetics; Critical Radius; Supersaturation; Precipitate Size Distribution Function; Precipitate Density; Factor of Filling;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ostwald ripening (coarsening) of plane precipitates was analytically analyzed at a grain boundary for the case when the precipitates growth is controlled by surface kinetics. Asymptotic characteristics of Ostwald ripening are found.

引用

页数：7

共 21 条

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[10] Anisotropic Ostwald Ripening in Silicon Nitride: On the Reaction-Controlled Kinetics
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