PHOTOCARRIER GENERATION IN SIGMA-BONDED ORGANIC POLYSILANE

被引：0

作者：

HATTORI, R

AOKI, Y

SHIRAFUJI, J

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1993年 / 166卷

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D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The photocarrier generation mechanism in a sigma-bonded organic polysilane (methylphenylpolysilane:PMPS) has been studied from photoabsorption, photoconductivity and transient photoresponse measurements. The peak of the photoconductivity spectrum is located at a wavelength longer than that of the photoabsorption spectrum, which is compatible with a model in which the surface recombination lifetime of photocarriers is much shorter than the bulk one. The logarithmic dependence of the photocarrier generation efficiency on the root of the applied field can be explained by one-dimensional geminate recombination process with field-assisted ionization of electron-hole pairs.

引用

页码：1275 / 1278

页数：4

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