CHARACTERIZATION OF THIN SURFACE-LAYERS BY AN X-RAY DOUBLE-CRYSTAL METHOD WITH A SAMPLE DESIGNATED AS THE 1ST CRYSTAL

被引：3
|
作者：
ITOH, N
机构：
[1] Department of Electronics, College of Engineering, University of Osaka Prefecture, Sakai, Osaka
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 8A期
关键词：
X-RAY DIFFRACTION; FWHM; CHARACTERIZATION; THIN SURFACE LAYER; GAAS; LAPPING;
D O I：
10.1143/JJAP.31.L1140
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
It is shown that thin surface layers can be sensitively characterized by using an X-ray double-crystal method, in which a sample designated as the first crystal is irradiated with incident X-rays at a low glancing angle and the X-rays reflected from the surface layer are analyzed by a second crystal. The applicability is proved by observing GaAs crystals lapped with fine abrasives. Deviation of the full width at half-maximum (FWHM) of the rocking curve for lapped crystals from that of a perfect crystal is a few times larger than the value obtained by the conventional method in which the sample is the second crystal.
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页码：L1140 / L1142
页数：3
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