INTERFACE REACTION OF PT-(111)SI WITH THE SUBSTRATE AT 450-DEGREES-C

The Pt-(111)Si interfacial reaction with substrate at 450°C was investigated. 100-300 Å thick Pt thin films were deposited onto the p-type, (111)-oriented Si substrates at 450°C. Samples were then annealed at temperatures of 300-900°C. The microstructures of silicides formed were investigated by transmission electron diffraction (TED) and X-ray diffraction analysis. Silicides formed in different phases and different microstructures were observed for different film thicknesses and different annealing temperatures. Their microstructures and epitaxial relations can be determined from the TED pattern. Moiré fringes were observed in many samples, which may give an indication whether the reaction was complete and with a perfectly grown epitaxial silicide layer. © 1990.