LIINSE2 THIN EPITAXIAL-FILMS ON (111)A-ORIENTED GAAS

被引：10
|
作者：
TEMPEL, A
SCHUMANN, B
MITARAY, S
KUHN, G
机构：
来源：
THIN SOLID FILMS | 1983年 / 101卷 / 04期
关键词：
CRYSTALS - Epitaxial Growth - ELECTRONS - Diffraction;
D O I：
10.1016/0040-6090(83)90100-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
LiInSe//2 Thin epitaxial layers were prepared by flash evaporation on 111 direction A-oriented GaAs Substrates and investigated by reflection high energy electron diffraction. The overgrowth is characterized by one-dimensional epitaxy with preferred azimuthal orientation. In general, the LiInSe//2 thin films crystallize in the beta -NaFeO//2 structure. In the substrate temperature range from 620 to 670 K a second phase with chalcopyrite structure was observed besides the beta -NaFeO//2 structure.
引用
收藏
页码：339 / 344
页数：6
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