DOMAINS AND DOMAIN NUCLEATION IN MAGNETRON-SPUTTERED COCR THIN-FILMS

被引:3
|
作者
DEMCZYK, BG
机构
[1] North Campus Electron Microbeam Analysis Laboratory, Department of Materials Science and Engineering, University of Michigan, Ann Arbor
基金
美国国家科学基金会;
关键词
D O I
10.1109/20.123851
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The magnetic domain configurations in magnetron-sputtered CoCr thin films have been examined by Lorentz transmission electron microscopy. The thinnest (10 nm) films display in-plane 180-degrees domain walls, while thicker (50 nm) films exhibit out-of-plane "dot"-type domain structures. The "dot" domains were observed even in films that had not yet developed a columnar morphology. Intermediate thickness films show a "feather-like" contrast, indicating that both in-plane and out-of-plane magnetization components are present. Magnetization reversal is seen to occur by domain wall motion in films displaying in-plane anisotropy and by rotation for perpendicular anisotropy films. Intrinsic film stress was found to play a major role in determining the preferred magnetization direction, and thus the resulting magnetic domain configurations.
引用
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页码:998 / 1002
页数:5
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