INTERBAND FARADAY EFFECT IN SEMICONDUCTORS IN STRONG CROSSED ELECTRIC AND MAGNETIC FIELDS

被引：0

作者：

ASKEROV, BM

GASHIMZA.FM

机构：

来源：

SOVIET PHYSICS SOLID STATE,USSR | 1966年 / 7卷 / 12期

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D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：2926 / +

页数：1

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[1] FARADAY-EFFECT IN MANY-VALLEY SEMICONDUCTORS SUBJECTED TO CROSSED STRONG ELECTRIC AND MAGNETIC-FIELDS
IDAYATOV, EI
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (03): : 337 - 338
[2] TUNNEL TRANSITIONS IN SEMICONDUCTORS IN STRONG CROSSED ELECTRIC AND MAGNETIC FIELDS
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YUNOVICH, AE
[J]. SOVIET PHYSICS JETP-USSR, 1969, 28 (04): : 630 - +
[3] THEORY OF ELECTRICAL CONDUCTIVITY OF SEMICONDUCTORS IN STRONG CROSSED MAGNETIC AND ELECTRIC FIELDS
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (02): : 272 - +
[4] TRANSVERSE FARADAY-EFFECT IN ANISOTROPIC SEMICONDUCTORS IN STRONG ELECTRIC-FIELDS
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (11): : 1421 - 1422
[5] INTERBAND FARADAY EFFECT IN GERMANIUM IN A STRONG MAGNETIC FIELD
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[J]. SOVIET PHYSICS-SOLID STATE, 1964, 5 (07): : 1488 - 1490
[6] INTERBAND OPTICAL ABSORPTION IN CROSSED ELECTRIC AND MAGNETIC FIELDS IN GERMANIUM
VREHEN, QHF
[J]. PHYSICAL REVIEW, 1966, 145 (02): : 675 - &
[7] ELECTRICAL-CONDUCTIVITY OF PIEZOELECTRIC SEMICONDUCTORS IN CROSSED STRONG ELECTRIC AND MAGNETIC-FIELDS
IDAYATOV, EI
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (07): : 823 - 824
[8] LIGHT ABSORPTION IN SEMICONDUCTORS IN CROSSED ELECTRIC AND MAGNETIC FIELDS
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PIKUS, GE
[J]. SOVIET PHYSICS JETP-USSR, 1967, 24 (02): : 339 - &
[9] INTERBAND FARADAY EFFECT IN DOPED SEMICONDUCTORS
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (03): : 386 - +
[10] ELECTRON STATES AND INTERBAND OPTICAL TRANSITIONS IN STRONG ELECTRIC FIELDS IN SEMICONDUCTORS
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (01): : 81 - &

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