DEGRADATION IN ON-STATE CHARACTERISTICS OF IGBTS THROUGH SELF-HEATING

被引：3
|
作者：
HU, ZR
MAWBY, PA
TOWERS, MS
BOARD, K
ZENG, J
机构：
[1] Univ Coll Of Swansea, Swansea
来源：
IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS | 1994年 / 141卷 / 06期
关键词：
THERMAL EFFECTS; CHARACTERISTICS OF IGBTS; ELECTROTHERMAL MODELING;
D O I：
10.1049/ip-cds:19941392
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Numerical studies of thermal effects on the on-state characteristics of IGBTs have been carried out using two-dimensional simulation. A discretisation scheme suitable for electrothermal modelling of semiconductor devices has been derived. The coupled Poisson's equation and continuity equations together with the heat flow equation are solved self-consistently. The simulation results show that the on-resistance and hence current handling capability of IGBTs can be significantly degraded by their self-heating.
引用
收藏
页码：439 / 444
页数：6
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