MODELING OF BACKGATING EFFECTS ON GAAS DIGITAL INTEGRATED-CIRCUITS

被引：8

作者：

LEE, SJ ^{[1
]}

LEE, CP ^{[1
]}

SHEN, E ^{[1
]}

KAELIN, GR ^{[1
]}

机构：

[1] UNIV SO CALIF,SEMICOND DEVICE PHYS LAB,LOS ANGELES,CA 90089

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1984年 / 19卷 / 02期

关键词：

D O I：

10.1109/JSSC.1984.1052124

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：245 / 250

页数：6

共 50 条

[1] SHIELDING OF BACKGATING EFFECTS IN GAAS INTEGRATED-CIRCUITS
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[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (04) : 169 - 171
[2] BACKGATING IN GAAS DEVICES AND INTEGRATED-CIRCUITS
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[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1992, 3 (04) : 263 - 271
[3] THE EFFECT OF BACKGATING ON THE DESIGN AND PERFORMANCE OF GAAS DIGITAL INTEGRATED-CIRCUITS
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (07) : 1135 - 1142
[4] THE INFLUENCE OF MATERIAL PARAMETERS ON BACKGATING IN GAAS INTEGRATED-CIRCUITS
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[5] TEMPERATURE-DEPENDENCE OF BACKGATING EFFECT IN GAAS INTEGRATED-CIRCUITS
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (05) : 541 - 545
[8] SHIELDING OF BACKGATING EFFECTS IN GaAs INTEGRATED CIRCUITS.
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[10] GAAS DIGITAL INTEGRATED-CIRCUITS - DESIGN AND EVALUATION
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