CARRIER CAPTURE AND UNIPOLAR AVALANCHE MULTIPLICATION IN QUANTUM-WELL HETEROSTRUCTURES

被引：5
|
作者：
LEFEBVRE, KR
ANDERSON, NG
机构：
[1] Department of Electrical and Computer Engineering, University of Massachusetts at Amherst, Amherst
来源：
APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 03期
关键词：
D O I：
10.1063/1.107938
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The influence of carrier capture on unipolar carrier multiplication in quantum well photomultipliers is investigated. General considerations regarding gain and carrier capture in quantum wells are discussed, and it is suggested that capture efficiencies need not be unexpectedly high to quench gain from intraband multiplication in some structures. This is investigated quantitatively through gain calculations which include the effects of electron capture via optical phonon emission in symmetric Al0.32Ga0.68As-GaAs quantum wells. Our results are discussed in the context of previous work on quantum well avalanche photodiodes, and some implications for the design of such devices are detailed.
引用
收藏
页码：282 / 284
页数：3
相关论文
共 50 条
  • [1] STUDY OF CARRIER CAPTURE AND VERTICAL TRANSPORT IN QUANTUM-WELL HETEROSTRUCTURES
    HILLMER, H
    KUHN, T
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (05) : 727 - 729
  • [2] CARRIER CAPTURE INTO A SEMICONDUCTOR QUANTUM-WELL
    BLOM, PWM
    SMIT, C
    HAVERKORT, JEM
    WOLTER, JH
    [J]. PHYSICAL REVIEW B, 1993, 47 (04) : 2072 - 2081
  • [3] Multichannel carrier scattering at quantum-well heterostructures
    V. I. Galiev
    A. N. Kruglov
    A. F. Polupanov
    E. M. Goldys
    T. L. Tansley
    [J]. Semiconductors, 2002, 36 : 546 - 551
  • [4] Multichannel carrier scattering at quantum-well heterostructures
    Galiev, VI
    Kruglov, AN
    Polupanov, AF
    Goldys, EM
    Tansley, TL
    [J]. SEMICONDUCTORS, 2002, 36 (05) : 546 - 551
  • [5] TAILORING OF THE CARRIER CAPTURE EFFICIENCY OF A QUANTUM-WELL
    GERARD, JM
    DEVEAUD, B
    [J]. SOLID-STATE ELECTRONICS, 1994, 37 (4-6) : 1167 - 1170
  • [6] Theory of avalanche multiplication and excess noise in quantum-well infrared photodetectors
    Schneider, H
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (24) : 4376 - 4378
  • [7] LINE BROADENING DUE TO CARRIER CARRIER SCATTERING IN QUANTUM-WELL HETEROSTRUCTURES
    HAMILTON, RAH
    REES, P
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (05) : 728 - 734
  • [8] Carrier screening effect in AlGaN quantum-well avalanche photodiode
    Zhang, Sheng-Kun
    Wang, Wubao
    Alfano, Robert R.
    Dabiran, Amir. M.
    Wowchak, Andrew M.
    Chow, Peter P.
    [J]. GALLIUM NITRIDE MATERIALS AND DEVICES IV, 2009, 7216
  • [9] CARRIER CAPTURE AND ESCAPE IN MULTISUBBAND QUANTUM-WELL LASERS
    TSAI, CY
    EASTMAN, LF
    LO, YH
    TSAI, CY
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (09) : 1088 - 1090
  • [10] CARRIER-CARRIER SCATTERING INDUCED CAPTURE IN QUANTUM-WELL LASERS
    BLOM, PWM
    HAVERKORT, JEM
    VANHALL, PJ
    WOLTER, JH
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (13) : 1490 - 1492
12345