VERTICAL TUNNELING BETWEEN 2 QUANTUM DOTS IN A TRANSVERSE MAGNETIC-FIELD

被引：18

作者：

TEWORDT, M ^{[1
]}

HUGHES, RJF ^{[1
]}

MARTINMORENO, L ^{[1
]}

NICHOLLS, JT ^{[1
]}

ASAHI, H ^{[1
]}

KELLY, MJ ^{[1
]}

LAW, VJ ^{[1
]}

RITCHIE, DA ^{[1
]}

FROST, JEF ^{[1
]}

JONES, GAC ^{[1
]}

PEPPER, M ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.49.8071

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tunneling between two quantum dots is studied at low temperatures. The quantum dots are formed by the combined sidewall confinement and vertical confinement in an AlxGa1-xAs-GaAs triple-barrier diode with a conducting diameter of 180 nm. The fine structure that is observed in the main resonance peaks of the current-voltage characteristics is related to lateral quantization effects. Electrons tunnel between zero-dimensional (OD) states in the two coupled quantum dots. A magnetic field applied perpendicular (transverse) to the tunneling direction shifts the main (2D) resonance peaks to higher bias and causes a substantial broadening. Within the fine structure we find that the resonance positions are virtually magnetic-field independent, whereas the resonance amplitudes show significant variations with increasing magnetic field; a simple model is developed to describe this behavior in terms of the magnetic-field dependence of the interdot transition probabilities.

引用

页码：8071 / 8075

页数：5

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