GAAS/ALGAAS SINGLE-QUANTUM-WELL OPTICAL SWITCH FABRICATED ON SI SUBSTRATE

被引：1

作者：

YUASA, T

NAGASHIMA, Y

MURASE, T

JIMBO, T

UMENO, M

机构：

[1] Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Nagoya, 466, Gokiso-cho, Showa-ku

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 8A期

关键词：

OPTICAL SWITCH; GAAS ON SI; MOCVD; QCSE; SINGLE MODE; WAVE-GUIDE;

D O I：

10.1143/JJAP.32.L1055

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a single-mode waveguide-type optical switch with a double hetero (DH)-structure fabricated on a Si substrate by Metalorganic Chemical Vapor Deposition (MOCVD). This switch utilizes the quantum confined Stark effect (QCSE). The sample consists of an Al0.3Ga0.7As cladding layers and Al0.25Ga0.75As guiding layer with an 8.3-nm-wide GaAs single quantum well (SQW). To measure the light absorption under reverse bias, the photo current method was applied out using a cw Ti:sapphire laser. We measured about a 10 nm shift of the absorption edge at - 8 V. This switch exhibits a 33. 1 dB/mm extinction ratio at 867 nm wavelength under - 8 V bias.

引用

页码：L1055 / L1057

页数：3

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