FOXFET BIASED MICROSTRIP DETECTORS - AN INVESTIGATION OF RADIATION SENSITIVITY

被引：6
|
作者：
BACCHETTA, N
BISELLO, D
CANALI, C
DAROS, R
GIRALDO, A
GOTRA, Y
PACCAGNELLA, A
PIACENTINO, GM
VERZELLESI, G
机构：
[1] INFN,SEZ PADOVA,VIA MARZOLO 8,I-35131 PADUA,ITALY
[2] UNIV PADUA,DIPARTIMENTO FIS,I-35131 PADUA,ITALY
[3] UNIV MODENA,FAC INGN,I-41100 MODENA,ITALY
[4] UNIV CAGLIARI,IST ELETTROTECN,I-09123 CAGLIARI,ITALY
[5] UNIV CASSINO,FAC INGN,I-03403 CASSINO,ITALY
[6] INFN,SEZ BOLOGNA,I-40126 BOLOGNA,ITALY
[7] UNIV PADUA,DIPARTIMENTO ELETTRON & INFORMAT,I-35131 PADUA,ITALY
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1994年 / 342卷 / 01期
关键词：
D O I：
10.1016/0168-9002(94)91408-7
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Radiation effects have been studied on single-sided FOXFET biased detectors and related test patterns. Radiation induced modifications of the electrical parameters and their thermal stability at room temperature and upon annealings have been studied for proton and gamma irradiations. The detector electrical characteristics have been correlated to Si bulk and surface damage, and to changes of the FOXFET properties. Interstrip resistance and capacitance have been investigated for gamma, p+ and n irradiations.
引用
收藏
页码：39 / 48
页数：10
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