ELECTRONIC RAMAN-SPECTRA OF SHALLOW ACCEPTORS IN SEMI-INSULATING GAAS

被引：47

|

作者：

WAN, K

BRAY, R

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.32.5265

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：5265 / 5274

页数：10

相关论文

共 50 条

[1] ELECTRONIC RAMAN-SCATTERING BY COMPENSATED SHALLOW ACCEPTORS IN SEMI-INSULATING GAAS
BRAY, R
WAN, K
SOLID STATE COMMUNICATIONS, 1985, 53 (12) : 1149 - 1149
[2] RAMAN-SPECTRA FROM HEAT-TREATED SEMI-INSULATING GAAS
NAKAMURA, T
USHIROKAWA, A
KATODA, T
APPLIED PHYSICS LETTERS, 1981, 38 (01) : 13 - 15
[3] SPATIAL-DISTRIBUTION OF RESIDUAL SHALLOW ACCEPTORS IN UNDOPED SEMI-INSULATING GAAS
WAGNER, J
WETTLING, W
WINDSCHEIF, J
ROTHEMUND, W
JOURNAL OF APPLIED PHYSICS, 1989, 65 (12) : 5225 - 5227
[4] RAMAN-SPECTROSCOPIC STUDY OF RESIDUAL ACCEPTORS IN SEMI-INSULATING BULK GAAS
WAGNER, J
RAMSTEINER, M
SEELEWIND, H
CLARK, J
JOURNAL OF APPLIED PHYSICS, 1988, 64 (02) : 802 - 807
[5] Bound exciton spectra in semi-insulating GaAs
Gislason, HP
Yang, BH
ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 201 - 205
[6] SEMI-INSULATING GAAS
HRIVNAK, L
CZECHOSLOVAK JOURNAL OF PHYSICS, 1984, 34 (05) : 436 - 444
[7] EVIDENCE FOR A SHALLOW LEVEL STRUCTURE IN THE BULK OF SEMI-INSULATING GAAS
CASTAGNE, M
BONNAFE, J
MANIFACIER, JC
FILLARD, JP
JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4894 - 4897
[8] INTRA-SHALLOW-DONOR PHOTOCONDUCTIVITY IN SEMI-INSULATING GAAS
KARPIERZ, K
SADOWSKI, ML
ACTA PHYSICA POLONICA A, 1991, 79 (01) : 121 - 124
[9] RAMAN-SPECTRA OF SHALLOW ACCEPTORS IN QUANTUM-WELL STRUCTURES
GAMMON, D
MERLIN, R
MASSELINK, WT
MORKOC, H
PHYSICAL REVIEW B, 1986, 33 (04): : 2919 - 2922
[10] FAR-INFRARED ABSORPTION FROM SHALLOW ACCEPTORS AND ITS RELATIONSHIP TO THE PERSISTENT PHOTOCURRENT IN SEMI-INSULATING GAAS
MANASREH, MO
MITCHEL, WC
FISCHER, DW
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (09) : 994 - 996

← 1 2 3 4 5 →