NPNN DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR ON INGAASP/INP

被引：30

|

作者：

SU, LM

GROTE, N

KAUMANNS, R

SCHROETER, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 01期

关键词：

D O I：

10.1063/1.96392

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：28 / 30

页数：3

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