AGING OF SEMICONDUCTOR-OXIDE STRUCTURES AT ELEVATED-TEMPERATURE

被引：1
|
作者：
URBAN, S [1 ]
机构：
[1] TESLA AS POPOV TELECOMMUN RES INST, PRAGUE, CZECHOSLOVAKIA
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1974年 / 23卷 / 02期
关键词：
D O I：
10.1002/pssa.2210230236
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：641 / 648
页数：8
相关论文
共 50 条
  • [1] AGING OF SEMICONDUCTOR-OXIDE STRUCTURES IN AN ELECTRIC-FIELD
    URBAN, S
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 26 (01): : 237 - 242
  • [2] ELEVATED-TEMPERATURE AGING OF HIPS
    CHEN, CC
    HABIBULLAH, M
    SAUER, JA
    JOURNAL OF APPLIED POLYMER SCIENCE, 1983, 28 (01) : 391 - 406
  • [3] SEMICONDUCTOR-OXIDE INTERFACE
    SCHMIDT, PF
    SANDOR, JE
    TRANSACTIONS OF THE METALLURGICAL SOCIETY OF AIME, 1965, 233 (03): : 517 - +
  • [4] SEMICONDUCTOR-OXIDE INTERFACE AS A HETEROJUNCTION
    LINDMAYER, J
    BUSEN, KM
    TRANSACTIONS OF THE METALLURGICAL SOCIETY OF AIME, 1965, 233 (03): : 530 - +
  • [5] MODELLING OF QUANTUM WIRES IN THE INTERFACE LAYER OF THE SEMICONDUCTOR-OXIDE STRUCTURES WITH CHARGE BUILT IN OXIDE
    Atamuratov, A. E.
    COMPLEX PHENOMENA IN NANOSCALE SYSTEMS, 2009, : 229 - 236
  • [6] FRACTURE AT ELEVATED-TEMPERATURE
    PAVINICH, W
    RAJ, R
    METALLURGICAL TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 1977, 8 (12): : 1917 - 1933
  • [7] CRYOBIOLOGY AT AN ELEVATED-TEMPERATURE
    DELOECKER, W
    SUTTON, R
    CRYO-LETTERS, 1989, 10 (04) : 213 - 214
  • [8] Temperature-dependent resistive switching behavior of a hybrid semiconductor-oxide planar system
    Majumder, S.
    Kumari, K.
    Ray, S. J.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2023, 129 (05):
  • [9] Temperature-dependent resistive switching behavior of a hybrid semiconductor-oxide planar system
    S. Majumder
    K. Kumari
    S. J. Ray
    Applied Physics A, 2023, 129
  • [10] POLYMORPHISM AND CRYSTAL-STRUCTURES OF INSB AT ELEVATED-TEMPERATURE AND PRESSURE
    YU, SC
    SPAIN, IL
    SKELTON, EF
    JOURNAL OF APPLIED PHYSICS, 1978, 49 (09) : 4741 - 4745
12345