QUANTUM FLUCTUATION EFFECTS IN A SINGLE-ELECTRON BOX

被引：0
|
作者：
HU, GY
OCONNELL, RF
RYU, JY
机构：
[1] Department of Physics and Astronomy, Louisiana State University Baton Rouge
来源：
PHYSICA B | 1994年 / 194卷
关键词：
D O I：
10.1016/0921-4526(94)90840-0
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Quantum fluctuation effects in a single electron box are analyzed by considering the gate voltage fluctuations with the use of the quantum Langevin model. At T = 0, we derive an analytic expression for the junction charge as a function of the gate voltage and its fluctuations. It is shown that, at T = 0, the sawtooth shape of the junction charge, as predicted by existing theories, is rounded off by the quantum fluctuation effects. At finite temperature, the theory is compared with experiments, and a good fit is obtained at all the relevant temperatures.
引用
收藏
页码：1021 / 1022
页数：2
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