TUNNELING MICROSCOPY AND SPECTROSCOPY OF MOLECULAR-BEAM EPITAXY GROWN GAAS-ALGAAS INTERFACES

被引：134
|
作者：
ALBREKTSEN, O [1 ]
ARENT, DJ [1 ]
MEIER, HP [1 ]
SALEMINK, HWM [1 ]
机构：
[1] IBM CORP,DIV RES,ZURICH RES LAB,CH-8803 RUSCHLIKON,SWITZERLAND
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 01期
关键词：
D O I：
10.1063/1.103563
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the first observation of GaAs/AlGaAs compound multilayers and interfaces at atomic scale resolution. Using a scanning tunneling microscope, the atomic registry in the epitaxial layers and their interfaces was observed. The semiconductor band gaps and valence-band offsets relative to the Fermi level are obtained via local spectroscopy in the GaAs and AlGaAs multilayers.
引用
收藏
页码：31 / 33
页数：3
相关论文
共 50 条
  • [1] GAAS-ALGAAS MQW AND GRINSCH LASERS GROWN BY MOLECULAR-BEAM EPITAXY
    WEIMANN, G
    SCHLAPP, W
    PHYSICA B & C, 1985, 129 (1-3): : 459 - 464
  • [2] PHOTOLUMINESCENCE STUDY OF GAAS-ALGAAS MULTIQUANTUM WELL GROWN BY MOLECULAR-BEAM EPITAXY
    OHTA, T
    KOBAYASHI, KLI
    NAKASHIMA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (01): : 59 - 63
  • [3] PHOTOLUMINESCENCE STUDY OF GaAs-AlGaAs MULTIQUANTUM WELL GROWN BY MOLECULAR-BEAM EPITAXY.
    Ohta, Tuneaki
    Kobayashi, Keisuke L.I.
    Nakashima, Hisao
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1986, 25 (01): : 59 - 63
  • [4] THEORETICAL INVESTIGATIONS OF THE NATURE OF THE NORMAL AND INVERTED GAAS-ALGAAS STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
    SINGH, J
    BAJAJ, KK
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 576 - 581
  • [5] SCANNING FORCE MICROSCOPY OBSERVATION OF GAAS AND ALGAAS SURFACES GROWN BY MOLECULAR-BEAM EPITAXY
    FATT, YS
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (01) : 158 - 163
  • [6] ALGAAS/GAAS(111) HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
    VINA, L
    WANG, WI
    APPLIED PHYSICS LETTERS, 1986, 48 (01) : 36 - 37
  • [7] MOLECULAR-BEAM EPITAXY ALGAAS/GAAS GROWN IN THE PRESENCE OF HYDROGEN
    PAO, YC
    LIU, D
    HARRIS, JS
    JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 305 - 308
  • [8] ALGAAS/GE/GAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
    WANG, Y
    BARUCH, N
    WANG, WI
    CHENEY, ME
    HUANG, CI
    SCHERER, RL
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02): : 1300 - 1302
  • [9] SEQUENTIAL TUNNELING IN GAAS/ALGAAS MULTIQUANTUM-WELL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
    HAN, ZY
    YOON, SF
    RADHAKRISHNAN, K
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (05) : 2868 - 2871
  • [10] PHOTOLUMINESCENCE OF QUANTUM GAAS-ALGAAS HOLES PLANTED BY THE MOLECULAR-BEAM EPITAXY METHOD
    BER, BY
    IVANOV, SV
    KOPEV, PS
    LEDENTSOV, NN
    MELTSER, BY
    URALTSEV, IN
    YAKOVLEV, DR
    IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1985, 49 (10): : 1905 - 1908
12345