Pd Seed Layer for Electroless Cu Deposition on TaN Diffusion Barrier by Self-Assembled-Monolayer Method(SAM)

被引:0
|
作者
Han, Won-kyu [1 ]
Cho, Jin-Ki [2 ]
Choi, Jae-Woong [1 ]
Kim, Jeong-tae [3 ]
Yeom, Seung-Jin [3 ]
Kwak, Noh-jung [3 ]
Kim, Jin-woong [3 ]
Kang, Sung-Goon [1 ]
机构
[1] Hanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea
[2] Korea Polytech Univ, Dept Adv Mat Engn, Shihung 2121, Kyonggi Do, South Korea
[3] Hynix Semicond Inc, R&D Div, Icheon Si 467701, Kyoungki Do, South Korea
来源
KOREAN JOURNAL OF MATERIALS RESEARCH | 2007年 / 17卷 / 09期
关键词
Layer-by Layer; Self assembled monolayer; ELD; X-ray photoelectron spectroscopy;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electroless deposition(ELD) was applied to fabricate Cu interconnections on a TaN diffusion barrier with Pd seed layer. The Pd seed layer was obtained by self-assembled monolayer method(SAM) with PDDA and PSS as surfactants. We were able to obtain about lOnm Pd nano particles as seeds for electroless Cu deposition and the density of Pd seeds was much higher than that of Pd seeds fabricated by conventional Pd sensitization-activation method. Also we were able to obtain finer Cu interconnections by ELD Therefore we concluded that the Pd seed layer by SAM was able to be applied to form Cu interconnection by ELD for under 30nm feature.
引用
收藏
页码:469 / 474
页数:6
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