ALKALI CONTAMINATION OF NATIVE OXIDES GROWN ON 6H AND 3C SILICON-CARBIDE

被引：0
|
作者：
RAYNAUD, C
AUTRAN, JL
BRIOT, JB
BALLAND, B
BILLON, T
LASSAGNE, P
机构：
[1] LPM, URA CNRS 358, INSA, F-69621 Villeurbanne Cedex
[2] CEA, F-91680 Bruyeres Le Chatel, CE de Bruyeres Le Chatel
[3] CEA, LETI, DMEL-CENG, F-38041 Grenoble Cedex
来源：
MICROELECTRONIC ENGINEERING | 1995年 / 28卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(95)00045-A
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Alkali mobile ion behaviour has been investigated in native oxides, grown on both 6H and 3C silicon carbide, by Thermally Stimulated Ionic Current (TSIC) measurements. We have used a numerical method to determine the detrapping energy distributions of Na+ and K+: identified by Secondary Ion Mass Spectrometry (SIMS), at Al/SiO2 and SiO2/SiC interfaces, and studied the dependence of these trap energies as a function of the electric field.
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页码：209 / 212
页数：4
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