HOT WALL EPITAXIAL-GROWTH AND CHARACTERIZATION OF DILUTED MAGNETIC SEMICONDUCTOR ZN1-XMNXSE

被引：3

作者：

WANG, J ^{[1
]}

QURESHI, AUH ^{[1
]}

TIAN, YS ^{[1
]}

WANG, X ^{[1
]}

HU, Y ^{[1
]}

ZHENG, SD ^{[1
]}

机构：

[1] FUDAN UNIV,CTR ANAL & MEASUREMENT,SHANGHAI 200433,PEOPLES R CHINA

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 126卷 / 04期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1016/0022-0248(93)90816-F

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Diluted magnetic semiconductor layers of Zn1-xMnxSe have been successfully grown on GaAs(100) substrates by the hot wall epitaxial technique. A Mn content up to 17% could be achieved by using a simple two-source hot wall tube. Raman measurements show that the crystalline quality is comparable with that of the lattice matched ZnS0.1Se0.9/GaAs system grown by molecular beam epitaxy. The crystalline perfection is deteriorated as the Mn content increases.

引用

页码：651 / 654

页数：4

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