RANGE DISTRIBUTION OF IMPLANTED IONS IN SIO2, SI3N4, AND AL2O3

被引：36
|
作者：
CHU, WK [1 ]
CROWDER, BL [1 ]
MAYER, JW [1 ]
ZIEGLER, JF [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
APPLIED PHYSICS LETTERS | 1973年 / 22卷 / 10期
关键词：
D O I：
10.1063/1.1654480
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：490 / 492
页数：3
相关论文
共 50 条
  • [1] Franz Dispersion Relation for Tunneling Simulations in Polycrystalline Silicon/SiO2/Si3N4/SiO2/Si and TaN/Al2O3/Si3N4/SiO2/Si Structures
    Vexler, Mikhail I.
    Kuligk, Angelika
    Meinerzhagen, Bernd
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (05) : 05DE011 - 05DE015
  • [2] Physico-Chemical Investigation of Component Interactions of the Si ― Al ― O ― N ― Ti System in the Region Si3N4 ― AlN ― Al2O3 ― SiO2 ― TiN ― TiO2. Part 1. Subsystems Si3N4 ― Al2O3, Si3N4 ― TiN, and Al2O3 ― TiN
    Vera G. Khoruzhaya
    Tamara Ya. Velikanova
    Powder Metallurgy and Metal Ceramics, 2001, 40 : 386 - 393
  • [3] Oxidation behavior of Si3N4 ceramics with Yb2O3, Al2O3 and SiO2 additives
    Murakami, Y
    Akiyama, K
    Yamamoto, H
    Sakata, H
    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 1998, 106 (01) : 35 - 40
  • [4] Surface potential measurements of vacuum ultraviolet irradiated Al2O3, Si3N4, and SiO2
    Lauer, JL
    Shohet, JL
    IEEE TRANSACTIONS ON PLASMA SCIENCE, 2005, 33 (02) : 248 - 249
  • [5] INVESTIGATIONS ON THE FORMATION OF SIO2 IN SI+-IMPLANTED AL2O3
    SHIMIZUIWAYAMA, T
    NIIMI, T
    NAKAO, S
    SAITOH, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (10A): : L1451 - L1453
  • [6] Investigations on the formation of SiO2 in Si+-implanted Al2O3
    Shimizu-Iwayama, Tsutomu
    Niimi, Tetsuji
    Nakao, Setsuo
    Saitoh, Kazuo
    Japanese Journal of Applied Physics, Part 2: Letters, 1993, 32 (10 A):
  • [7] HIGH-TEMPERATURE STRENGTHS OF SELECTED AL2O3, SI3N4, AND FUSED SIO2 MATERIALS
    SHEEHAN, JE
    HOLZGRAF, JF
    AMERICAN CERAMIC SOCIETY BULLETIN, 1980, 59 (03): : 358 - 358
  • [8] Analysis of electrical properties of insulators (Si3N4, SiO2, AIN, and Al2O3)/0.5 nm Si3N4/AlGaN/GaN heterostructures
    Maeda, Narihiko
    Hiroki, Masanobu
    Watanabe, Noriyuki
    Oda, Yasuhiro
    Yokoyama, Haruki
    Yagi, Takurna
    MakiMot, Toshiki
    Enoki, Takatomo
    Kobayashi, Takashi
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 2007, 4 (07): : 2712 - +
  • [9] PH ISFETS USING AL2O3, SI3N4, AND SIO2 GATE THIN-FILMS
    MATSUO, T
    ESASHI, M
    ABE, H
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1856 - 1857
  • [10] Electron Energy Loss Spectroscopy Characterization of TANOS (TaN/Al2O3/Si3N4/SiO2/Si) Stacks
    Park, Jucheol
    Heo, Sung
    Chung, JaeGwan
    Park, Gyeong-Su
    MICROSCOPY AND MICROANALYSIS, 2013, 19 : 109 - 113
12345