High performance driver monolithic low temperature poly-Si TFT-LCD

被引：0
|
作者：
Yamamoto, Y
Morita, T
Yamane, Y
Funada, F
Awane, K
机构：
来源：
SHARP TECHNICAL JOURNAL | 1995年 / 63期
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
We have developed a new offset gate technology for low temperature poly-Si TFT-LCD by using complete self-aligned processes with anodic oxidation of Al. This technology allows us to control the offset length precisely, so that we have achieved high performance TFTs equipped with the following characteristics: high reliability, high field effect mobility (n-ch 174 cm(2)/V . s, p-ch 66 cm(2)/V . s for driver TFTs), and low leakage current (1.0 pA/mu m for pixel TFTs). Then we have constructed 4 inch diagonal driver monolithic TFT-LCDs.
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页码：5 / 8
页数：4
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