P-MOSFET PARAMETERS AT CRYOGENIC TEMPERATURES

被引：22
|
作者：
MADDOX, RL [1 ]
机构：
[1] ROCKWELL INT CORP, ELECTR RES DIV, ANAHEIM, CA 92803 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1976年 / 23卷 / 01期
关键词：
D O I：
10.1109/T-ED.1976.18340
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：16 / 21
页数：6
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