AUGER RECOMBINATION IN INGAASP

被引：40

作者：

HAUG, A ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 06期

关键词：

D O I：

10.1063/1.93986

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：512 / 514

页数：3

共 50 条

[1] INTERBAND AUGER RECOMBINATION IN INGAASP
CHIU, LC
CHEN, PC
YARIV, A
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (06) : 938 - 941
[2] AUGER RECOMBINATION RATE IN INGAASP LASERS
BURT, MG
[J]. ELECTRONICS LETTERS, 1982, 18 (19) : 806 - 807
[3] TEMPERATURE-DEPENDENCE OF AUGER RECOMBINATION IN INGAASP
COTTER, D
NELSON, AW
[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1986, 3 (08) : P88 - P88
[4] EVIDENCE OF THE IMPORTANCE OF AUGER RECOMBINATION FOR INGAASP LASERS
HAUG, A
[J]. ELECTRONICS LETTERS, 1984, 20 (02) : 85 - 86
[5] BAND-TO-BAND AUGER RECOMBINATION IN INGAASP LASERS
SUGIMURA, A
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (01) : 21 - 23
[6] AUGER RECOMBINATION IN QUANTUM-WELL INGAASP HETEROSTRUCTURE LASERS
CHIU, LC
YARIV, A
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (10) : 1406 - 1409
[7] STUDIES ON AUGER RECOMBINATION LIFETIME IN HEAVILY-DOPED INGAASP
DE, SS
GHOSH, AK
HALDAR, JC
HAJRA, AK
BERA, M
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1993, 138 (01): : K13 - K16
[8] PHOTOEXCITED CARRIER LIFETIME AND AUGER RECOMBINATION IN 1.3 MICRON BANDGAP INGAASP
HERITAGE, JP
SERMAGE, B
MARTINEZ, OE
[J]. PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1983, 439 : 14 - 17
[9] BAND-TO-BAND AUGER RECOMBINATION EFFECT ON INGAASP LASER THRESHOLD
SUGIMURA, A
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) : 627 - 635
[10] AUGER RECOMBINATION EFFECT ON THRESHOLD CURRENT OF INGAASP QUANTUM WELL LASERS
SUGIMURA, A
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) : 932 - 941

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