THRESHOLD VOLTAGE SHIFT OF MOS-TRANSISTORS BY ION-IMPLANTATION

被引：0

作者：

RUNGE, H ^{[1
]}

机构：

[1] SIEMENS,CENT RES & DEV LABS,MUNICH,FED REP GER

来源：

ELECTRONIC ENGINEERING | 1976年 / 48卷 / 575期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：41 / 43

页数：3

共 50 条

[1] MODIFICATION OF THEORY OF THRESHOLD VOLTAGE SHIFT OF MOS-TRANSISTORS BY ION-IMPLANTATION
RUNGE, H
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 30 (01): : 147 - 153
[2] THRESHOLD VOLTAGE SHIFT OF P-CHANNEL MOS-TRANSISTORS BY IMPLANTATION OF DONORS
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APPLIED PHYSICS, 1975, 8 (01): : 43 - 46
[3] THRESHOLD VOLTAGE SHIFT OF MOS TRANSISTORS BY ION IMPLANTATION.
Runge, H.
Electronic Engineering (London), 1976, 48 (575): : 41 - 43
[4] ON THE SHIFT OF THRESHOLD VOLTAGE OF NONUNIFORMLY DOPED MOS-TRANSISTORS
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SOLID-STATE ELECTRONICS, 1980, 23 (03) : 283 - 284
[5] INFLUENCE OF PARAMETERS OF ION-IMPLANTATION PROCESS ON SHIFT OF THRESHOLD VOLTAGE OF MOS-TRANSISTOR
DUSZAK, M
JAKUBOWSKI, A
BULLETIN DE L ACADEMIE POLONAISE DES SCIENCES-SERIE DES SCIENCES TECHNIQUES, 1978, 26 (10): : 905 - 911
[6] THRESHOLD-VOLTAGE TEMPERATURE DRIFT IN ION-IMPLANTED MOS-TRANSISTORS
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[7] MOS THRESHOLD SHIFTING BY ION-IMPLANTATION
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SOLID-STATE ELECTRONICS, 1973, 16 (11) : 1217 - 1232
[8] THRESHOLD VOLTAGE MISMATCH IN SHORT-CHANNEL MOS-TRANSISTORS
STEYAERT, M
BASTOS, J
ROOVERS, R
KINGET, P
SANSEN, W
GRAINDOURZE, B
PERGOOT, A
JANSSENS, E
ELECTRONICS LETTERS, 1994, 30 (18) : 1546 - 1548
[9] THRESHOLD-VOLTAGE SENSITIVITY OF ION-IMPLANTED MOS-TRANSISTORS DUE TO PROCESS VARIATIONS
SCHEMMERT, W
ZIMMER, G
ELECTRONICS LETTERS, 1974, 10 (09) : 151 - 152
[10] THRESHOLD VOLTAGE OF MOS-TRANSISTORS DOPED NONUNIFORMLY NEAR-SURFACE
FELTL, H
IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES, 1978, 2 (06): : 191 - 198

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