Fabrication of Semi-Transparent Photovoltaic Cell by a Cost-Effective Technique

Semi-transparent inorganic thin film PV cells have been fabricated using n-type (CdS) and p-type (CdTe) semiconductors. Large area devices which can be used as windows and skylights in buildings can be fabricated using cost effective solution processes. The device structure is Glass/TCO/CdTe/CdS/TCO. Chemically stable CdS and CdTe layers are deposited at temperatures 353 K to 373 K (80 degrees C to 100 degrees C) under controlled pH. The CdCl2 activation is carried out followed by air annealing. The p-n junction is formed by sintering the device at 673 K to 723 K (400 degrees C to 450 degrees C). The characterization of cells is carried out using XRD, SEM, AFM, and UV-Visible spectroscopy. The thickness of the cell is similar to 600 nm. The band gap values are 2.40 eV for CdS and 1.36 eV for CdTe with transmittance of about 70 pct in the visible region. Under 1.5 AM solar spectrum, V-oc, and I-sc of the initial device are 3.56e-01 V and 6.20e-04 A, respectively. (C) ASM International (ASM) and The Minerals, Metals & Materials Society (TMS) 2015