MODEL OF PHOTOTHERMAL IONIZATION SPECTROSCOPY IN HIGH-PURITY GAAS

被引:0
|
作者
LOW, TS [1 ]
LEE, B [1 ]
STILLMAN, GE [1 ]
机构
[1] UNIV ILLINOIS,URBANA,IL 61801
关键词
D O I
10.1016/0038-1098(85)90893-2
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:1135 / 1135
页数:1
相关论文
共 50 条
  • [1] PHOTOTHERMAL IONIZATION SPECTROSCOPY OF ACCEPTORS IN HIGH-PURITY GERMANIUM
    DARKEN, LS
    [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) : 3754 - 3764
  • [2] PHOTOTHERMAL IONIZATION SPECTROSCOPY OF DONORS IN HIGH-PURITY GERMANIUM
    DARKEN, LS
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (03) : 1118 - 1125
  • [3] PHOTOCONDUCTIVE RESPONSE OF COMPENSATING IMPURITIES IN PHOTOTHERMAL IONIZATION SPECTROSCOPY OF HIGH-PURITY SILICON AND GERMANIUM
    DARKEN, LS
    HYDER, SA
    [J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 731 - 733
  • [4] THE TEST OF USING PHOTOTHERMAL IONIZATION SPECTROSCOPY FOR DETERMINATION OF DEEP LEVELS IN HIGH-PURITY GERMANIUM
    POPP, T
    [J]. JADERNA ENERGIE, 1983, 29 (01): : 25 - 26
  • [5] DONOR IDENTIFICATION IN HIGH-PURITY INP USING FOURIER-TRANSFORM PHOTOTHERMAL IONIZATION SPECTROSCOPY
    LEE, B
    STILLMAN, GE
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (05) : 309 - 310
  • [6] ANALYSIS OF HIGH-PURITY SOLIDS BY RESONANCE IONIZATION SPECTROSCOPY
    PARKS, JE
    SPAAR, MT
    CRESSMAN, PJ
    [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 89 (01) : 4 - 15
  • [7] HIGH-PURITY EPITAXIAL GAAS
    AOKI, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (09) : 1267 - 1271
  • [8] Photothermal ionization spectroscopy of Be acceptor in GaAs
    Yuan, XZ
    Lu, W
    Shi, GL
    Chen, ZH
    Miao, ZL
    Shen, SC
    [J]. FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 2000, 4086 : 286 - 289
  • [9] Photothermal ionization spectroscopy of Be acceptor in GaAs
    Yuan, XZ
    Lu, W
    Shi, GL
    Chen, YD
    Chen, ZH
    Li, N
    Shen, XC
    [J]. JOURNAL OF INFRARED AND MILLIMETER WAVES, 2000, 19 (05) : 385 - 388
  • [10] PHOTOELECTRIC LASER MAGNETIC SPECTROSCOPY OF SHALLOW DONORS IN HIGH-PURITY GAAS
    GOLUBEV, VG
    ZHILYAEV, YV
    IVANOVOMSKII, VI
    MARKARYAN, GR
    OSUTIN, AV
    CHELNOKOV, VE
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (10): : 1074 - 1077