共 37 条
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- [2] FULL-BOLTZMANN-EQUATION SOLUTIONS OF THE ACOUSTIC-PHONON-LIMITED CONDUCTIVITY AND HALL MOBILITIES FOR P-TYPE SILICON AND GERMANIUM PHYSICAL REVIEW B, 1983, 27 (10): : 6279 - 6295
- [5] ANISOTROPY OF CONDUCTIVITY OF P-TYPE GERMANIUM AND SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (06): : 696 - 701
- [6] PHONON PART OF THE TRANSVERSE THERMOMAGNETIC NERNST EFFECT IN P-TYPE GERMANIUM SOVIET PHYSICS-SOLID STATE, 1960, 2 (05): : 761 - 765
- [7] TRANSITION RATES FOR ACOUSTIC-PHONON-HOLE SCATTERING IN P-TYPE SILICON WITH NONPARABOLIC BANDS PHYSICAL REVIEW B, 1981, 24 (08): : 4611 - 4622
- [8] ANISOTROPY OF CONDUCTIVITY DUE TO WARM HOLES IN P-TYPE GERMANIUM AND P-TYPE SILICON ZEITSCHRIFT FUR PHYSIK, 1968, 212 (02): : 183 - +
- [10] ATTENUATION IN HEAVILY DOPED P-TYPE SILICON DUE TO ELECTRON-PHONON INTERACTION JOURNAL OF THE ACOUSTICAL SOCIETY OF AMERICA, 1962, 34 (12): : 2003 - &