PHONON-ASSISTED TUNNELING IN PERSISTENT-PHOTOCURRENT DECAY

被引：9
|
作者：
HE, LX
MARTIN, KP
HIGGINS, RJ
机构：
[1] GEORGIA INST TECHNOL,SCH ELECT ENGN,ATLANTA,GA 30332
[2] UNIV OREGON,DEPT PHYS,EUGENE,OR 97403
[3] GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
来源：
PHYSICAL REVIEW B | 1989年 / 39卷 / 18期
关键词：
D O I：
10.1103/PhysRevB.39.13276
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：13276 / 13285
页数：10
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