CONSTANT-VOLTAGE BIASING OF IMPATT INJECTION-LOCKED OSCILLATORS

被引：0

|

作者：

CHAN, JL

机构：

来源：

MICROWAVE JOURNAL | 1983年 / 26卷 / 05期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：60 / 60

页数：1

相关论文

共 50 条

[1] CONSTANT-VOLTAGE BIASING OF IMPATT INJECTION-LOCKED OSCILLATORS
CHAN, JL
[J]. MICROWAVES & RF, 1983, 22 (05) : 80 - 80
[2] INJECTION-LOCKED HIGH-POWER IMPATT OSCILLATORS
GERSHENZON, EM
LEVITES, AA
PLOKHOVA, LA
SMETANIN, AI
[J]. RADIOTEKHNIKA I ELEKTRONIKA, 1984, 29 (11): : 2179 - 2185
[3] INJECTION-LOCKED IMPATT OSCILLATORS APPLIED TO FDM MICROWAVE TRANSMISSION
WOOD, HB
[J]. ELECTRONICS LETTERS, 1973, 9 (06) : 141 - 142
[4] Stabilization of RF parameters of injection-locked pulsed IMPATT oscillators
Kasatkin, LV
Karushkin, NF
[J]. MICROWAVE JOURNAL, 2000, 43 (09) : 172 - +
[5] INJECTION-LOCKED OSCILLATORS
JOCHEN, P
[J]. NACHRICHTENTECHNISCHE ZEITSCHRIFT, 1970, 23 (10): : 537 - &
[6] POWER, PHASE AND NOISE CHARACTERISTICS OF INJECTION-LOCKED SI AND GAAS IMPATT OSCILLATORS
GERSHENZON, EM
LEVITES, AA
PLOKHOVA, LA
SMETANIN, AI
[J]. RADIOTEKHNIKA I ELEKTRONIKA, 1990, 35 (05): : 1044 - 1053
[7] Theory enables locking-band widening of injection-locked IMPATT oscillators
Kasatkin, L
[J]. MICROWAVES & RF, 2001, 40 (04) : 86 - +
[8] Theory enables locking-band widening of injection-locked IMPATT oscillators
Kasatkin, L
[J]. MICROWAVES & RF, 2001, 40 (05) : 95 - 96
[9] CONSTANT-VOLTAGE BIAS IMPROVES IMPATT AMPS
MCCLYMONDS, JW
[J]. MICROWAVES, 1980, 19 (07): : 64 - 66
[10] Injection-Locked Photonic Oscillators
Valagiannopoulos, Constantinos
Kovanis, Vassilios
[J]. IEEE ANTENNAS AND PROPAGATION MAGAZINE, 2021, 63 (04) : 51 - 59

← 1 2 3 4 5 →