ULTRA-HIGH DIFFERENTIAL GAIN IN GAINAS-ALGAINAS QUANTUM-WELLS - EXPERIMENT AND MODELING

被引：15

作者：

XU, ML ^{[1
]}

TAN, GL ^{[1
]}

XU, JM ^{[1
]}

IRIKAWA, M ^{[1
]}

SHIMIZU, H ^{[1
]}

FUKUSHIMA, T ^{[1
]}

HIRAYAMA, Y ^{[1
]}

MAND, RS ^{[1
]}

机构：

[1] FURUKAWA ELECT CORP LTD,YOKOHAMA RES & DEV LABS,NISHI KU,YOKOHAMA,KANAGAWA 220,JAPAN

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 09期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1109/68.414664

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high differential gain of 9.3 x 10(-16) cm(2) is obtained in GaInAs-AlGaInAs 1.55-mu m multiquantum-well lasers with 1% compressive strain grown by molecular-beam epitaxy, This is the highest ever achieved in this material system. The model-solid theory and an approximate k . p method are incorporated in the theoretical gain calculation that provides a detailed understanding of the experimental results and guidance to further improvement.

引用

页码：947 / 949

页数：3

共 19 条

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