Research on Growth and Physical Properties of N delta-doped Cu2O Films

被引：0

作者：

Li Wei ^{[1
]}

Pan Jingxin ^{[1
]}

Wang Dengkui ^{[1
]}

Fang Xuan ^{[1
]}

Fang Dan ^{[1
]}

Wang Xinwei ^{[1
]}

Tang Jilong ^{[1
]}

Wang Xiaohua ^{[1
]}

Sun Xiuping ^{[2
]}

机构：

[1] Changchun Univ Sci & Technol, State Key Lab High Power Semicond Laser, Changchun 130022, Jilin, Peoples R China

[2] Changchun Univ Sci & Technol, Coll Sci, Changchun 130012, Jilin, Peoples R China

来源：

CHINESE JOURNAL OF LASERS-ZHONGGUO JIGUANG | 2018年 / 45卷 / 01期

关键词：

materials; plasma enhanced atomic layer deposition; N delta-doping; Cu2O films; NH3 doping source;

D O I：

10.3788/CJL201845.0103003

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

By the plasma enhanced atomic layer deposition (PEALE) technique, the N delta-doped Cu2O films are prepared with NH3 as the doping source. The effects of N-doping on the surface morphology, optical and electrical properties of Cu2O films are studied. The study results show that the N-doping causes the lattice distortion and the surface roughness of the N delta-doped Cu2O thin films increases. The bandgap width of the N delta-doped Cu2O thin films increases from 2.70 eV to 3.20 eV, and the absorption edge becomes steep. The carrier concentration of the doped sample is 6.32 x 10(19) cm(-3), enhanced by one order of magnitude comparing with that of the un-doped samples (5.77x10(18) cm(-3))

引用

页数：5

共 22 条

[1] Thin film deposition of Cu2O and application for solar cells
Akimoto, K.
Ishizuka, S.
Yanagita, M.
Nawa, Y.
Paul, Goutam K.
Sakurai, T.
[J]. SOLAR ENERGY, 2006, 80 (06) : 715 - 722
[2] Nitrogen self-doped graphitic carbon nitride as efficient visible light photocatalyst for hydrogen evolution
Fang, Jiawen
Fan, Huiqing
Li, Mengmeng
Long, Changbai
[J]. JOURNAL OF MATERIALS CHEMISTRY A, 2015, 3 (26) : 13819 - 13826
[3] ELECTRONIC-STRUCTURE OF CU2O AND CUO
GHIJSEN, J
TJENG, LH
VANELP, J
ESKES, H
WESTERINK, J
SAWATZKY, GA
CZYZYK, MT
[J]. PHYSICAL REVIEW B, 1988, 38 (16): : 11322 - 11330
[4] [和晓晓 He Xiaoxiao], 2014, [中国激光, Chinese Journal of Lasers], V41, P607001
[5] [花银群 Hua Yinqun], 2015, [中国激光, Chinese Journal of Lasers], V42, P507001
[6] Control of hole carrier density of polycrystalline Cu2O thin films by Si doping
Ishizuka, S
Kato, S
Okamoto, Y
Akimoto, K
[J]. APPLIED PHYSICS LETTERS, 2002, 80 (06) : 950 - 952
[7] Nitrogen doping into Cu2O thin films deposited by reactive radio-frequency magnetron sputtering
Ishizuka, SO
Kato, S
Maruyama, T
Akimoto, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (4B): : 2765 - 2768
[8] Properties of Mn-doped Cu2O semiconducting thin films grown by pulsed-laser deposition
Ivill, M
Overberg, ME
Abernathy, CR
Norton, DP
Hebard, AF
Theodoropoulou, N
Budai, JD
[J]. SOLID-STATE ELECTRONICS, 2003, 47 (12) : 2215 - 2220
[9] Electrical and structural properties of Ni-doped Cu2O films prepared by pulsed laser deposition
Kikuchi, N
Tonooka, K
[J]. THIN SOLID FILMS, 2005, 486 (1-2) : 33 - 37
[10] Nitrogen-doped cuprous oxide as a p-type hole-transporting layer in thin-film solar cells
Lee, Yun Seog
Heo, Jaeyeong
Winkler, Mark T.
Siah, Sin Cheng
Kim, Sang Bok
Gordon, Roy G.
Buonassisi, Tonio
[J]. JOURNAL OF MATERIALS CHEMISTRY A, 2013, 1 (48) : 15416 - 15422

← 1 2 3 →