CHANNELING RADIATION FROM 72 MEV ELECTRONS IN SILICON - TRANSITION FROM PLANAR TO AXIAL CHANNELING

被引:2
|
作者
DIEDRICH, E [1 ]
BUSCHHORN, G [1 ]
KUFNER, W [1 ]
RZEPKA, M [1 ]
GENZ, H [1 ]
HOFFMANN, P [1 ]
NETHING, U [1 ]
RICHTER, A [1 ]
机构
[1] TH DARMSTADT,INST KERNPHYS,W-6100 DARMSTADT,GERMANY
关键词
D O I
10.1016/0168-583X(92)95817-B
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Channeling radiation from 72 MeV electrons was measured using the new superconducting electron accelerator at Darmstadt (S-DALINAC). Radiation spectra were obtained for electrons channeled along the main axes and planes in a 13-mu-m thick silicon crystal. Good agreement between theory, i.e. many-beam calculations, and experiment can be reported for planar channeling radiation. The radiation at the transition from planar channeling in the (110) plane and the (111) plane to channeling along the [110] axis was also investigated. The spectra show a continuous change from pure planar radiation to the more intense axial channeling radiation, with new lines occurring in the (110) spectra for angles between the electron direction and the [110] axis smaller than about 10 mrad. The line energies depend on the angle to the axis and range from about 50 to several hundred keV.
引用
收藏
页码:275 / 278
页数:4
相关论文
共 50 条
  • [1] AXIAL CHANNELING RADIATION FROM MEV ELECTRONS
    ANDERSEN, JU
    BONDERUP, E
    LAEGSGAARD, E
    MARSH, BB
    SORENSEN, AH
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 194 (1-3): : 209 - 224
  • [2] AXIAL-CHANNELING RADIATION FROM MEV ELECTRONS IN DIAMOND AND SILICON
    LOTZ, W
    GENZ, H
    HOFFMANN, P
    NETHING, U
    RICHTER, A
    WEICKENMEIER, A
    KOHL, H
    KNUPFER, W
    SELLSCHOP, JPF
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 48 (1-4): : 256 - 259
  • [3] PLANAR-CHANNELING RADIATION FROM MEV ELECTRONS IN DIAMOND AND SILICON
    DABAGOV, SB
    BELOSHITSKY, VV
    KUMAKHOV, MA
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 74 (03): : 368 - 374
  • [4] PLANAR AND AXIAL CHANNELING RADIATION FROM RELATIVISTIC ELECTRONS IN LIF
    SWENT, RL
    PANTELL, RH
    PARK, H
    KEPHART, JO
    KLEIN, RK
    DATZ, S
    FEARICK, RW
    BERMAN, BL
    [J]. PHYSICAL REVIEW B, 1984, 29 (01): : 52 - 60
  • [5] PLANAR CHANNELING RADIATION FROM 54-110-MEV ELECTRONS IN DIAMOND AND SILICON
    GOUANERE, M
    SILLOU, D
    SPIGHEL, M
    CUE, N
    GAILLARD, MJ
    KIRSCH, RG
    POIZAT, JC
    REMILLIEUX, J
    BERMAN, BL
    CATILLON, P
    ROUSSEL, L
    TEMMER, GM
    [J]. PHYSICAL REVIEW B, 1988, 38 (07): : 4352 - 4371
  • [6] MEASUREMENT OF PLANAR CHANNELING RADIATION FROM 19.2 MEV ELECTRONS IN SILICON USING A MICROTRON
    POTURAEV, SV
    KUMAKHOV, MA
    OGNEV, LI
    ISKANDARIAN, VM
    KHATKOV, TA
    STIRIN, AI
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1993, 176 (01): : 31 - 39
  • [7] PLANAR CHANNELING RADIATION FROM RELATIVISTIC ELECTRONS AND POSITRONS IN SILICON
    KUMAR, VH
    PATHAK, AP
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1994, 182 (01): : 51 - 57
  • [8] CHANNELING RADIATION FROM 350 MEV ELECTRONS
    KOMAKI, K
    OOTUKA, A
    FUJIMOTO, F
    HORIKAWA, N
    NAKANISHI, T
    OHASHI, Y
    FUKUI, S
    OKUNO, H
    [J]. PHYSICS LETTERS A, 1983, 98 (5-6) : 303 - 305
  • [9] CHANNELING RADIATION FROM 1 MEV ELECTRONS
    MATSUHATA, H
    KAMIYA, Y
    KAJII, S
    FUJIMOTO, F
    KOMAKI, K
    NAKANISHI, T
    HORIKAWA, N
    FUKUI, S
    GAO, CY
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (09): : 1858 - 1859
  • [10] MEASUREMENT OF THE POLARIZATION OF CHANNELING RADIATION FROM 65 MEV ELECTRONS IN SILICON
    DIEDRICH, E
    BUSCHHORN, G
    KUFNER, W
    RZEPKA, M
    GENZ, H
    GRAF, HD
    HOFFMANNSTASCHECK, P
    RICHTER, A
    [J]. PHYSICS LETTERS A, 1993, 178 (3-4) : 331 - 334