EFFECT OF DISLOCATIONS ON GALVANOMAGNETIC PROPERTIES OF N-TYPE GE

被引:0
|
作者
PODOR, B
机构
来源
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:393 / +
页数:1
相关论文
共 50 条
  • [1] GALVANOMAGNETIC PROPERTIES OF COMPENSATED n-TYPE InAs.
    Garyagdyev, G.
    Emel'yanenko, O.V.
    Zotova, N.V.
    Lagunova, T.S.
    Nasledov, D.N.
    Pentsov, A.V.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 8 (02): : 214 - 218
  • [2] GALVANOMAGNETIC PROPERTIES OF N-TYPE CDAS2
    FISCHLER, AS
    PHYSICAL REVIEW, 1961, 122 (02): : 425 - &
  • [3] QUENCHING OF PHOTOCONDUCTIVITY CONNECTED WITH EDGE DISLOCATIONS IN N-TYPE GE
    KAMIENIECKI, E
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 9 (02): : 509 - +
  • [4] ELECTRIC PROPERTIES OF DISLOCATIONS IN N-TYPE GERMANIUM
    KRYLOW, J
    AULEYTNER, J
    PHYSICA STATUS SOLIDI, 1969, 32 (02): : 581 - +
  • [5] ELECTRICAL AND GALVANOMAGNETIC PROPERTIES OF N-TYPE INSB AT LOW TEMPERATURES
    CHAO, LC
    NASLEDOV, DN
    SOVIET PHYSICS-SOLID STATE, 1961, 3 (04): : 861 - 864
  • [6] GALVANOMAGNETIC EFFECTS IN N-TYPE SILICON
    KRAG, WE
    PHYSICAL REVIEW, 1960, 118 (02): : 435 - 450
  • [7] GALVANOMAGNETIC EFFECTS IN N-TYPE GERMANIUM
    KRAG, WE
    BROWN, MC
    PHYSICAL REVIEW, 1964, 134 (3A): : A779 - +
  • [8] LOW-FIELD MAGNETORESISTANCE AND MAGNETOCONDUCTIVITY IN N-TYPE GE WITH DISLOCATIONS
    VANWEEREN, JH
    STRUIKMANS, R
    KOOPMANS, G
    BLOK, J
    PHYSICA STATUS SOLIDI, 1968, 27 (01): : 225 - +
  • [9] Temperature dependence of galvanomagnetic properties of undoped n-type GaAs/GaAs and n-type InGaAs/InP layers
    Wolkenberg, A.
    PrzesLawski, T.
    Regiński, K.
    Kaniewski, J.
    Electron Technology, 2002, 34
  • [10] GALVANOMAGNETIC PROPERTIES OF N-TYPE HGCR2SE4
    SELMI, A
    GIBART, P
    GOLDSTEIN, L
    TOMAS, A
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) : 267 - 272