THERMAL-STABILITY OF AL-SI/TISI2/SI SCHOTTKY DIODES

被引:8
|
作者
CHEN, DC
MERCHANT, P
AMANO, J
机构
关键词
D O I
10.1116/1.573291
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:709 / 713
页数:5
相关论文
共 50 条
  • [1] STUDY OF THE THERMAL-STABILITY OF THE AL/TIW/TISI2/SI STRUCTURE
    FURLAN, R
    VANDERSPIEGEL, J
    SWART, JW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (08) : 2377 - 2381
  • [2] INVESTIGATION OF THERMAL-STABILITY OF MULTILAYERED SI/TISI2-AL AND SI/TISI2(TIN)-W-AL SYSTEMS
    KISELEV, NA
    LEBEDEV, OI
    ORLIKOVSKY, AA
    SEDELNIKOV, AE
    VALIEV, KA
    VASILIEV, AG
    VASILIEV, AL
    VACUUM, 1993, 44 (10) : 1015 - 1023
  • [3] STUDY OF THE ELECTRICAL AND INTERFACIAL PROPERTIES OF TISI2/SI SCHOTTKY DIODES
    DEBOSSCHER, W
    VANMEIRHAEGHE, RL
    LAFLERE, WH
    CARDON, F
    VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1987, 42 (236): : 137 - 139
  • [4] THERMAL-STABILITY IN THE LESS-THAN-SI-GREATER-THAN/TISI2/TIN/AL METALLIZATION SYSTEM
    HAMDI, AH
    ALVI, NS
    KERMANI, A
    ALKAISI, M
    RAPID THERMAL ANNEALING / CHEMICAL VAPOR DEPOSITION AND INTEGRATED PROCESSING, 1989, 146 : 235 - 240
  • [6] THERMAL-STABILITY OF AL-1-PERCENT-SI-0.5-PERCENT-CU/TISI2 CONTACT STRUCTURE
    HWANG, YS
    PAEK, SH
    SONG, YS
    CHO, HC
    CHOI, JS
    JUNG, JK
    LEE, JK
    LEE, SI
    LEE, JG
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1994, 5 (03) : 163 - 167
  • [7] Nonlinear analysis of the I-V characteristics in Ti/Si and TiSi2/Si Schottky diodes
    PerezRigueiro, J
    Jimenez, C
    PerezCasero, R
    MartinezDuart, JM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (04): : 2623 - 2626
  • [8] THERMAL-STABILITY STUDY OF TIN/TISI2 DIFFUSION BARRIER BETWEEN CU AND N+SI
    CHANG, TS
    WANG, WC
    WANG, LP
    HWANG, JC
    HUANG, FS
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (12) : 7847 - 7865
  • [9] THERMAL-STABILITY OF TISI2 ON MONOCRYSTALLINE AND POLYCRYSTALLINE SILICON
    WONG, CY
    WANG, LK
    MCFARLAND, PA
    TING, CY
    JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) : 243 - 246
  • [10] PREPARATION OF SI-TISI2 SCHOTTKY DIODES BY RAPID THERMAL ANNEALING
    PEREZRIGUEIRO, J
    JIMENEZ, C
    PEREZCASERO, R
    MARTINEZDUART, JM
    THIN SOLID FILMS, 1994, 246 (1-2) : 172 - 176