共 50 条
- [4] HIGHLY UNIFORM GAAS AND ALGAAS EPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J]. FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1985, 21 (02): : 190 - 197
- [6] IN INCORPORATION IN GAINAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1992, 60 (23) : 2911 - 2913
- [7] Numerical model for oxygen incorporation into AlGaAs layer grown by molecular beam epitaxy [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (9AB): : L1041 - L1043
- [8] SEGREGATED ALGAAS(110) GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 517 - 518
- [9] ELECTRON TRAPS IN ALGAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (11) : 5062 - 5069
- [10] ALGAAS DOPING SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 52 (22) : 1883 - 1885