STUDY OF OXYGEN INCORPORATION IN ALGAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引:32
|
作者
ACHTNICH, T [1 ]
BURRI, G [1 ]
ILEGEMS, M [1 ]
机构
[1] UNIV LAUSANNE,INST EXPTL PHYS,CH-1015 LAUSANNE,SWITZERLAND
关键词
D O I
10.1116/1.575793
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:2537 / 2541
页数:5
相关论文
共 50 条
  • [1] Oxygen incorporation mechanism in AlGaAs layers grown by molecular beam epitaxy
    Naritsuka, S
    Kobayashi, O
    Mitsuda, K
    Nishinaga, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 2003, 254 (3-4) : 310 - 315
  • [2] INFLUENCE OF INDIUM DOPING ON ALGAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    CHANG, KH
    LEE, CP
    WU, JS
    LIU, DG
    LIOU, DC
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (16) : 1640 - 1642
  • [3] Mn incorporation in GaN thin layers grown by molecular-beam epitaxy
    Kocan, M.
    Malindretos, J.
    Roever, M.
    Zenneck, J.
    Niermann, T.
    Mai, D.
    Bertelli, M.
    Seibt, M.
    Rizzi, A.
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (09) : 1348 - 1353
  • [4] HIGHLY UNIFORM GAAS AND ALGAAS EPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    SAITO, J
    SHIBATOMI, A
    [J]. FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1985, 21 (02): : 190 - 197
  • [5] Photoluminescence of high-quality AlGaAs layers grown by molecular-beam epitaxy
    Zhuravlev, KS
    Toropov, AI
    Shamirzaev, TS
    Bakarov, AK
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (09) : 1131 - 1133
  • [6] IN INCORPORATION IN GAINAS GROWN BY MOLECULAR-BEAM EPITAXY
    WOODBRIDGE, K
    [J]. APPLIED PHYSICS LETTERS, 1992, 60 (23) : 2911 - 2913
  • [7] Numerical model for oxygen incorporation into AlGaAs layer grown by molecular beam epitaxy
    Naritsuka, S
    Kobayashi, O
    Maruyama, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (9AB): : L1041 - L1043
  • [8] SEGREGATED ALGAAS(110) GROWN BY MOLECULAR-BEAM EPITAXY
    WANG, WI
    KUAN, TS
    TSANG, JC
    CHANG, LL
    ESAKI, L
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 517 - 518
  • [9] ELECTRON TRAPS IN ALGAAS GROWN BY MOLECULAR-BEAM EPITAXY
    YAMANAKA, K
    NARITSUKA, S
    KANAMOTO, K
    MIHARA, M
    ISHII, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (11) : 5062 - 5069
  • [10] ALGAAS DOPING SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY
    ACKLEY, DE
    LEE, H
    NOURI, N
    COLVARD, C
    [J]. APPLIED PHYSICS LETTERS, 1988, 52 (22) : 1883 - 1885