PROPOSAL FOR SEMICONDUCTOR LASER WITH WIDE-GAP EMITTERS

被引：0
|
作者：
PECENY, T
机构：
来源：
PHYSICA STATUS SOLIDI | 1964年 / 6卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：651 / 664
页数：14
相关论文
共 50 条
  • [1] Effect of dipole structures on field emission of wide-gap semiconductor emitters
    Baskin, L. M.
    Neittaanmaeki, P.
    Plamenevskii, B. A.
    [J]. TECHNICAL PHYSICS, 2010, 55 (12) : 1793 - 1796
  • [2] Effect of dipole structures on field emission of wide-gap semiconductor emitters
    L. M. Baskin
    P. Neittaanmäki
    B. A. Plamenevskii
    [J]. Technical Physics, 2010, 55 : 1793 - 1796
  • [3] WIDE-GAP SEMICONDUCTOR (IN,GA)N
    MATSUOKA, T
    TANAKA, H
    SASAKI, T
    KATSUI, A
    [J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 141 - 146
  • [4] New optical gain mechanism for wide-gap semiconductor laser diodes
    Uenoyama, T
    [J]. LASER INTERACTION AND RELATED PLASMA PHENOMENA, 1996, (369): : 843 - 848
  • [5] Development of semiconductor detectors based on wide-gap materials
    Zaletin V.M.
    [J]. Atomic Energy, 2004, 97 (5) : 773 - 780
  • [6] Development of semiconductor detectors based on wide-gap materials
    Zaletin, VM
    [J]. ATOMIC ENERGY, 2004, 97 (05) : 773 - 780
  • [7] Thermal heating of wide-gap semiconductor materials by CO2 laser radiation
    Shkumbatyuk, P. S.
    Tsyutsyura, D. I.
    [J]. Zhurnal Tekhnicheskoi Fiziki, 40 (12):
  • [8] (CaO)(FeSe): A Layered Wide-Gap Oxychalcogenide Semiconductor
    Han, Fei
    Wang, Di
    Malliakas, Christos D.
    Sturza, Mihai
    Chung, Duck Young
    Wan, Xiangang
    Kanatzidis, Mercouri G.
    [J]. CHEMISTRY OF MATERIALS, 2015, 27 (16) : 5695 - 5701
  • [9] Ultrafast carrier-carrier scattering in wide-gap GaN semiconductor laser devices
    Hughes, S
    Kobayashi, T
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (06) : 733 - 736
  • [10] WIDE-GAP SEMICONDUCTOR INGAN AND INGAALN GROWN BY MOVPE
    MATSUOKA, T
    YOSHIMOTO, N
    SASAKI, T
    KATSUI, A
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (02) : 157 - 163
12345