PHONONS AND RADIATIVE RECOMBINATION IN SELF-ASSEMBLED QUANTUM DOTS

被引：41
|
作者：
FARFAD, S
LEON, R
LEONARD, D
MERZ, JL
PETROFF, PM
机构：
[1] UNIV CALIF SANTA BARBARA,CTR QUANTIZED ELECTR STRUCT,SANTA BARBARA,CA 93106
[2] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106
[3] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106
来源：
PHYSICAL REVIEW B | 1995年 / 52卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.52.5752
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The radiative recombination of photocarriers has been studied in various self-assembled In-x Ga-1-x As/GaAs and AlxIn1-xAs/AlyGa1-y As quantum dot samples, prepared with the spontaneous island formation during molecular-beam epitaxy. Depending on the relative values of the interlevel spacings and the phonon energies, some structures display strong enhancement of the photoluminescence for excitation energies permitting resonant phonon relaxations, or strong level filling and emission from the excited states with saturation of the ground states at higher excitation intensities.
引用
收藏
页码：5752 / 5755
页数：4
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