SECONDARY ION MASS-SPECTROMETRY - DEPTH PROFILING OF SHALLOW AS IMPLANTS IN SILICON AND SILICON DIOXIDE

被引：41
|
作者：
VANDERVORST, W
MAES, HE
DEKEERSMAECKER, RF
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 05期
关键词：
D O I：
10.1063/1.334142
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1425 / 1433
页数：9
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