OBSERVATION OF A LINE GROWTH FAULT ON THE SI(111)-7X7 SURFACE USING STM

被引：0
|
作者：
HADLEY, MJ
TEAR, SP
机构：
来源：
SURFACE SCIENCE | 1991年 / 247卷 / 01期
关键词：
D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Using a scanning tunnelling microscope we have observed an interesting new fault on the Si(111)-7 x 7 surface, corresponding to an adatom registry shift of 1 bulk unit cell in the [1BAR1BAR2] direction. We propose a model to account for the surface along the fault.
引用
收藏
页码：L221 / L223
页数：3
相关论文
共 50 条
  • [1] Local cleavage of the Si(111)7x7 surface by STM
    Pascual, JI
    Rogero, C
    Gómez-Herrero, J
    Baró, AM
    [J]. PHYSICAL REVIEW B, 1999, 59 (15): : 9768 - 9770
  • [2] OBSERVATION OF STRAIN IN THE SI(111) 7X7 SURFACE
    ROBINSON, IK
    WASKIEWICZ, WK
    FUOSS, PH
    NORTON, LJ
    [J]. PHYSICAL REVIEW B, 1988, 37 (08): : 4325 - 4328
  • [3] Simultaneous AFM and STM measurements on the Si(111)-(7x7) surface
    Sugimoto, Yoshiaki
    Nakajima, Yuuki
    Sawada, Daisuke
    Morita, Ken-ichi
    Abe, Masayuki
    Morita, Seizo
    [J]. PHYSICAL REVIEW B, 2010, 81 (24)
  • [4] Photoetching of Si(111)-(7x7) studied by STM
    Chen, XH
    Polanyi, JC
    Rogers, D
    [J]. SURFACE SCIENCE, 1997, 376 (1-3) : 77 - 86
  • [5] STRUCTURAL STUDY OF SI GROWTH ON A SI(111) 7X7 SURFACE
    NAKAHARA, H
    ICHIMIYA, A
    [J]. SURFACE SCIENCE, 1991, 241 (1-2) : 124 - 134
  • [6] Photoemission and STM study of an In nanocluster array on the Si(111)-7x7 surface
    Byun, J. H.
    Ahn, J. R.
    Choi, W. H.
    Kang, P. G.
    Yeom, H. W.
    [J]. PHYSICAL REVIEW B, 2008, 78 (20)
  • [7] Imaging atomic orbitals in STM experiments on a Si(111)-(7x7) surface
    Chaika, A. N.
    Myagkov, A. N.
    [J]. CHEMICAL PHYSICS LETTERS, 2008, 453 (4-6) : 217 - 221
  • [8] STACKING-FAULT MODEL FOR THE SI(111)-(7X7) SURFACE
    BENNETT, PA
    FELDMAN, LC
    KUK, Y
    MCRAE, EG
    ROWE, JE
    [J]. PHYSICAL REVIEW B, 1983, 28 (06): : 3656 - 3659
  • [9] Fermi surface of Si(111)7X7
    Losio, R
    Altmann, KN
    Himpsel, FJ
    [J]. PHYSICAL REVIEW B, 2000, 61 (16) : 10845 - 10853
  • [10] Dynamic observation of reaction processes of Pd with Si on a Si(111)7x7 surface after thermal treatment using UHV-STM
    Yoshida, S
    Itoh, M
    Yamamoto, N
    Nagamura, T
    Oyama, M
    Okazaki, S
    [J]. LANGMUIR, 1999, 15 (20) : 6813 - 6820
12345