ENHANCED EXCITON ABSORPTION IN QUANTUM-CONFINED STARK-EFFECT OF (110)-ORIENTED INGAASP QUANTUM-WELLS

被引：3
|
作者：
OE, K [1 ]
WAKITA, K [1 ]
BHAT, R [1 ]
KOZA, MA [1 ]
机构：
[1] BELLCORE, RED BANK, NJ 07701 USA
来源：
ELECTRONICS LETTERS | 1992年 / 28卷 / 15期
关键词：
QUANTUM OPTICS; SEMICONDUCTORS;
D O I：
10.1049/el:19920884
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new phenomenon of the quantum-confined Stark effect has been found in InGaAsP quantum wells grown on (110)InP substrates by MOVPE. Enhanced excition absorption concurrent with the applied voltage is observed for the first time.
引用
收藏
页码：1390 / 1391
页数：2
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