Organic Thin Film Transistors with Polyvinylpyrrolidone / Nickel Oxide Sol-Gel Derived Nanocomposite Insulator

Polyvinylpyrrolidone / Nickel oxide (PVP/NiO) dielectrics were fabricated with sol-gel method using 0.2 g of PVP at different working temperatures of 80, 150 and 200 degrees C. Structural properties and surface morphology of the hybrid films were investigated by X-Ray diffraction (XRD) and Scanning Electron Microscope (SEM) respectively. Energy dispersive X-ray spectroscopy (EDX) was used to make a quantitative chemical analysis of an unknown material. The obtained results demonstrate the feasibility of using high dielectric constant nanocomposite PVP/NiO as gate dielectric insulator in the organic thin film transistors (OTFTs). 2012 JNS All rights reserved